1 n-channel 30 v (d-s) mosfet features ? halogen-free acc o rding to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? power supply - secondary synchronous rectification ? dc/dc converter produc t summa ry v ds (v) r ds(on) ( )i d (a) q g (typ.) 30 0. 016 at v gs = 10 v 50 d 21.7 0.022 at v gs = 4.5 v 50 d notes: a. duty cycle 1 %. b. see soa curve for volta ge derating. c. whe n mounted on 1" square pcb (fr-4 material). d. package limite d. absolute maximum ratings t c = 25 c, unless otherwise noted pa rameter sym bol li mit uni t dr ain-source voltage v ds 30 v gate -source v oltage v gs 20 contin uous drain current (t j = 150 c ) t c = 25 c i d 50 d a t c = 70 c 50 d pulsed dra i n current i dm 100 a v alanche c urrent i as 40 single a v alanch e energy a l = 0.1 mh e as 80 mj max i mum power dissipation a t c = 25 c p d 59.5 b w t a = 25 c c 2.7 oper ating junction and storage temperature range t j , t stg - 55 to 15 0 c thermal resist ance rat ings pa rameter sy mbol li mit unit junction-to-ambient (pcb mount) c r thj a 46 c/ w j unction-to-case (drain) r thjc 2.1 d g s n-channel mosfe t t o-252 s gd top v i ew www.din-tek.jp dt u 5 0 n0 3
2 not e s: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not subject to production testing. c. indep endent of ope rating temperature. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications t j = 25 c, unless otherwise noted pa ram e ter symb ol test conditions min. typ. max. un it static drain-source breakdown v oltage v ds v ds = 0 v, i d = 250 a 30 v gate t h reshold voltage v gs(t h) v ds = v gs , i d = 250 a 1 2 .5 gate-b ody leakage i gss v ds = 0 v, v gs = 2 0 v 250 na zero gate voltage drain current i dss v ds = 30 v , v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 125 c 5 0 v ds = 30 v , v gs = 0 v , t j = 150 c 25 0 on-state drain current a i d(on ) v ds t 10 v, v gs = 10 v 50 a drain-source on-state resistance a r ds( on) v gs = 10 v , i d = 22 a 0 . 011 0.016 : v gs = 4.5 v, i d = 20 a 0 .015 0.022 forward transconductance a g fs v ds = 15 v , i d = 20 a 110 s dynam i c b input capacita n ce c iss v gs = 0 v, v ds = 15 v, f = 1 mh z 2780 pf output c apacitance c oss 641 rev erse t ransfer capacitance c rss 260 to tal gate charge c q g v ds = 1 5 v, v gs = 10 v , i d = 20 a 44 66 nc v ds = 15 v, v gs = 4.5 v, i d = 20 a 21.7 32.6 gate-s o urce charge c q gs 7 gate-dr a in charge c q gd 6.7 ga te re sistance r g f = 1 mhz 0. 4 2 4 : tu r n - o n d e l ay t i m e c t d(on) v dd = 15 v , r l = 1.5 : i d # 10 a, v gen = 10 v, r g = 1 : 81 6 ns rise time c t r 918 t ur n-off delay time c t d(off) 35 5 3 fa ll time c t f 918 drain- so urce body diode ratings and characteristics t c = 25 c b co ntinuous current i s 50 a pulse d current i sm 100 f orw ard voltage a v sd i f = 10 a, v gs = 0 v 0.75 1.5 v reverse recovery time t rr i f = 10 a, di/dt = 100 a/s 34 51 ns peak reverse recovery current i rm( rec) 23 a re v erse recovery charge q rr 34 5 1 nc z z z g l q w h n m s ' 7 8 1
3 typica l c har acteristics 25 c, unless otherwise noted drain to s ource voltage vs. i d transfer characteristics t r ansconductance 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 v ds - drain - to-source voltage (v) - drain c urrent (a) i d v gs =3 v v gs = 10 v thru 4 v 0 1 2 3 4 5 0.0 0 .6 1.2 1.8 2.4 3.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate - to-source voltage (v) - drain current (a) i d 0 45 90 135 180 0 6 12 18 24 30 i d - drain c urrent (a) - t ransconductance (s) g fs t c = 125 c t c = - 55 c t c = 25 c on-resistance vs. drain cu rrent on -resistance vs. gate-to-source voltage gate charge 0.003 0.004 0.005 0.006 0.007 0 20 40 60 80 100 v gs =10v v gs =4. 5 v - on - r esistance ( ) r ds(o n) i d - drain c urrent (a) 0.000 0.003 0.006 0.009 0.012 0.015 2468 1 0 t j = 25 c t j = 150 c - on - r esistance ( ) r ds(o n ) v gs - gate - to-source voltage (v) 0 2 4 6 8 10 0 1 02 0304050 i d =20a v ds =1 5v v ds =8v v ds =24v - gate- t o-source voltage (v) q g - t otal gate charge (nc) v gs www.din-tek.jp dt u 5 0 n0 3
4 ty pi cal ch aracteristics 25 c, unless otherwise noted so urce-drain d iode forward voltage capacitance on-resistance vs. junction temperature 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c v sd - source - to-drain voltage (v) - source current (a) i s 0 750 1500 2250 3000 3750 0 5 10 15 20 25 30 c iss c oss c rss v ds - drain - to-source voltage (v) c - capacitance (pf) 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 i d =20a v gs =4. 5 v v gs =1 0v t j - junction t emperature (c) (normalized) - on - r esistance r ds( on) thre s hold voltage drain source breakdown vs. junction temperature current derating 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a (v) v gs(t h) t j - t emperature (c) 33 35 37 39 41 43 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a v ds - drain - to-source voltage (v) t j - t emperature (c) 0 20 40 60 80 100 0 2 55 075100125150 package limited t c - case t emperature (c) i d - drain current (a) www.din-tek.jp dt u 5 0 n0 3
5 typica l c har acteristics 25 c, unless otherwise noted sing le pu lse avalanche current capability vs. time time (s) (a) i da v 100 10 1 10 -3 10 -2 10 -1 10 -4 10 -6 t j 10 -5 t j = 25 c = 150 c safe oper ating area 0.01 0.1 1 10 100 1000 0.1 1 10 100 t c = 25 c single pulse bvdss limited limited by r ds(on) * 100 a 1ms v ds - drain - to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified - drain current (a) i d 10 ms 1 s, 10 s, dc 100 ms normalized t h ermal transient impedance, junction-to-case 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 du ty cycle = 0.5 square wave pulse duration (s) normalized ef fective transient thermal impedance 1 0.1 0.05 single pulse 0.02 www.din-tek.jp dt u 5 0 n0 3
1 to-252aa case outline note ? dim en sion l3 is for reference only. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters inches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 5.21 - 0.205 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.14 1.52 0.045 0.060 ecn: x12-0247 -rev. m, 24-dec-12 dwg: 5347 package information www.din-tek.jp
1 application note rec ommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) application note www.din-tek.jp
1 disclaimer all pro d uct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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